Configuration
Single
Maximum Collector-Emitter Saturation Voltage
1.0 V
Number of Pins
2
Maximum Collector-Base Voltage
15 V
Maximum Base-Emitter Voltage
3 V
Package/Case
TO
Maximum Power Dissipation
115 W
Collector-Emitter Voltage
-60 V, 60 V
Number of Elements per Chip
1
Maximum Base-Emitter Saturation Voltage
2 V
Maximum DC Collector Current
15 A
Maximum Operating Temperature
200 °C (392 °F)
Mounting Style
Through-Hole
Transistor Category
Power Transistor
Minimum Operating Temperature
-65 °C (-85 °F)
Type
NPN BJT
Maximum Operating Frequency
2.5 MHz